Integrated NanoMaterials Laboratory

Nanomaterials and nanostructures grown in INML are used in lasers, solar cells, detectors, transistors, modulators, and a wide range of other electronic and photonic devices.

Molecular Beam Epitaxy

Integrated NanoMaterials Laboratory

The Integrated Nanomaterials Laboratory (INML) is a state-of-the-art nanomaterials synthesis and characterization facility. INML addresses the critical technological needs of the future through material development as we integrate nanoscience with disciplines such as electronics, photonics, renewable energy, chemistry, biology, and physics. the extensive technological advances made by the INML particularly in the areas of integrated iii-Sb/CMOS optoelectronics, infra- red photonics, and electronics form the basis of a large number of our on-going partnerships and collaborations.

Services:

Epitaxial services and research expertise

The INML provides epitaxial services for a wide array of research clients, from academic groups both here at UCLA and around the world, to national laboratories and many partners in industry. The INML grows III -V and III -N compound semiconductor materials in ultra high vacuum (~10-10 Torr) with emphasis on purity, control, and atomic-layer precision. Nanomaterials and nanostructures grown in the INML are used in lasers, solar cells, detectors, transistors, modulators, and a wide range of other electronic and photonic devices.

Molecular Beam Epitaxy (MBE) facilities

Featuring two interconnected Veeco GEN -930 MBE systems, the INML is equipped with the material synthesis and growth-monitoring tools necessary to fabricate a wide range of III -V and III -N compound semiconductor nanostructures.
Center Highlights
  • Semiconductor nanomaterials synthesis & characterization facility
  • -III-As/Sb and III -N MBE epitaxial growth foundry services
  • High quality alloys for electronic / photonic devices
  • Integration of dissimilar materials for novel applications
  • Work closely with ISNC cleanroom and NPC at CNSI

    III-N chamber

  • N plasma source with RF generator
  • Fully automated N gas delivery system
  • High T substrate heater - 1200 degree celsius
  • Emissivity correcting optical pyrometer
  • Up to 3" diameter wafers
  • RHEED for real-time in-situ monitoring

    III-As/Sb chamber

  • Group III: In, Ga, Al effusion cells
  • Automated As and Sb valved crackers
  • Dopants: Si, Te, and Be cells
  • RHEED for real-time in-situ monitoring
  • KSA400 software for image/video analysis
  • Automated growth control - Molly

Semiconductor Epitaxy

Overview:

Epitaxial services and research expertise

The Integrated Nanomaterials Laboratory (INML) provides epitaxial services for a wide array of research clients, from academic groups both here at UCLA and around the world, to national laboratories and many partners in industry. INML grows III -V and III -N compound semiconductor materials in ultra high vacuum (~10-10 Torr) with emphasis on purity, control, and atomic-layer precision. Nanomaterials and nanostructures grown in the INML are used in lasers, solar cells, detectors, transistors, modulators, and a wide range of other electronic and photonic devices.
Center Highlights
  • Semiconductor nanomaterials synthesis & characterization facility
  • -III-As/Sb and III -N MBE epitaxial growth foundry services
  • High quality alloys for electronic / photonic devices
  • Integration of dissimilar materials for novel applications
  • Work closely with ISNC cleanroom and NPC at CNSI

Services:


Featuring two interconnected Veeco GEN -930 MBE systems, the INML is equipped with the material synthesis and growth-monitoring tools necessary to fabricate a wide range of III-V and III-N compound semiconductor nanostructures.

III-As/Sb chamber

  • Group III: In, Ga, Al effusion cells
  • Automated As and Sb valved crackers
  • Dopants: Si, Te, and Be cells
  • RHEED for real-time in-situ monitoring
  • KSA400 software for image/video analysis
  • Automated growth control - Molly
  • III-N chamber

  • N plasma source with RF generator
  • Fully automated N gas delivery system
  • High T substrate heater - 1200 degree celsius
  • Emissivity correcting optical pyrometer
  • Up to 3" diameter wafers
  • RHEED for real-time in-situ monitoring