Integrated NanoMaterials Laboratory

Nanomaterials and nanostructures grown in INML are used in lasers, solar cells, detectors, transistors, modulators, and a wide range of other electronic and photonic devices.

Molecular Beam Epitaxy

Integrated NanoMaterials Laboratory



Faculty Director: Prof. Diana L. Huffaker

Professor, Electrical Engineering Department
Director, Integrated NanoMaterials Core Lab, California NanoSystems Institute 
Director and PI, NSF IGERT Clean Energy for Green Industry at UCLA

PhD, Material Sciences, University of Texas, Austin
MS, Material Sciences, University of Texas, Austin
BS, Engineering Physics, University of Arizona

Research Interests:
Professor Diana Huffaker’s research interests cover nanodot-based optoelectronic devices including III-V/Si photonics, lasers, single-photon emitters, III-V nanotransistors, solar cells and electronic characterization of biomaterials. Her current research projects focus on device development, crystal growth (MBE and MOCVD) and characterization of patterned and self-assembled quantum dots in compound III-(As, P, N, Sb), modeling of self-assembled processes along with electronic characterization of biomaterials.

National Security Science and Engineering Faculty Fellow, 2008
IEEE Fellow, 2008

Technical Director: Baolai Liang

Ph.D., Micro-Electronics & Photonics, University of Arkansas
M.S., Optics, Hebei University, China
B.S., Applied Physics, Hebei University, China

Research Interests:
Fabrication and characterization of high density (>1011 QDs/cm2) or ultra-low density (<108 QDs/cm2), and laterally-organized semiconductor QDs via both “top-down” and “bottom-up” methods, especially by selective area growth and droplet epitaxy technique. These QDs are useful for versatile devices like laser, detector, solar cell, modulator, single photon source, etc.

Senior Scientist and Lab Manager: Mukul C. Debnath, Ph.D.

Ph.D., Applied Physics, Tohoku University
M.S., Applied Physics, Tohoku University
M.Sc./B.Sc., Physics, University of Dhaka

Research Interests:
Dr. Debnath’s research interest cover wide range of III-V and II-VI semiconductor nanostructures design and grown by molecular beam epitaxy (e.g., epilayers, quantum dots, quantum wells, spin superlattices, waveguides, etc.) and their physical-electrical-magneto-optical characterizations for basic physics and opto-electronics device applications. Presently, he has been working on high-mobility (>40,000 cm2/V-s at RT) InSb-based quantum wells for integrated transistors and high-density (~1011/cm2) InAs-based quantum dots for intermediate-band solar cells.