Molecular Beam Epitaxy
Integrated NanoMaterials Laboratory
Faculty Director: Prof. Diana L. Huffaker
PhD, Material Sciences, University of Texas, Austin
MS, Material Sciences, University of Texas, Austin
BS, Engineering Physics, University of Arizona
Professor Diana Huffaker’s research interests cover nanodot-based optoelectronic devices including III-V/Si photonics, lasers, single-photon emitters, III-V nanotransistors, solar cells and electronic characterization of biomaterials. Her current research projects focus on device development, crystal growth (MBE and MOCVD) and characterization of patterned and self-assembled quantum dots in compound III-(As, P, N, Sb), modeling of self-assembled processes along with electronic characterization of biomaterials.
National Security Science and Engineering Faculty Fellow, 2008
IEEE Fellow, 2008
Technical Director: Baolai Liang
Ph.D., Micro-Electronics & Photonics, University of Arkansas
M.S., Optics, Hebei University, China
B.S., Applied Physics, Hebei University, China
Fabrication and characterization of high density (>1011 QDs/cm2) or ultra-low density (<108 QDs/cm2), and laterally-organized semiconductor QDs via both “top-down” and “bottom-up” methods, especially by selective area growth and droplet epitaxy technique. These QDs are useful for versatile devices like laser, detector, solar cell, modulator, single photon source, etc.
Senior Scientist and Lab Manager: Mukul C. Debnath, Ph.D.
Ph.D., Applied Physics, Tohoku University
M.S., Applied Physics, Tohoku University
M.Sc./B.Sc., Physics, University of Dhaka
Dr. Debnath’s research interest cover wide range of III-V and II-VI semiconductor nanostructures design and grown by molecular beam epitaxy (e.g., epilayers, quantum dots, quantum wells, spin superlattices, waveguides, etc.) and their physical-electrical-magneto-optical characterizations for basic physics and opto-electronics device applications. Presently, he has been working on high-mobility (>40,000 cm2/V-s at RT) InSb-based quantum wells for integrated transistors and high-density (~1011/cm2) InAs-based quantum dots for intermediate-band solar cells.